inchange semiconductor isc product specification isc silicon npn power transistor 2SD111 description high power dissipation- : p c = 100w@t c = 25 high current capability- : i c = 10a applications designed for power amplifier , power switching ,dc-dc converter and regulator applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 10 v i c collector current-continuous 10 a i e emitter current-continuous -10 a i b b base current-continuous 3 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD111 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma ; r be = 80 v v (br)ebo emitter-base breakdown voltage i e = 50ma ; i c = 0 10 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1a b 1.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 2.5 v i cbo collector cutoff current v cb = 50v; i e = 0 0.5 ma i ebo emitter cutoff current v eb = 10v; i c =0 10 ma h fe-1 dc current gain i c = 1a; v ce = 5v 30 300 h fe-2 dc current gain i c = 5a; v ce = 5v 10 f t current-gain?bandwidth product i c = 1a ; v ce = 10v 1 mhz c ob output capacitance i e = 0; v cb = 50v; f= 1mhz 200 pf ? h fe- 2 classifications r o y 30-90 50-150 100-300 isc website www.iscsemi.cn 2
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